IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 5.5 MOHM;
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Technology | Vgs (Max) | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 5.5 mOhm | 100 nC | 75 A | 40 V | TO-220AB | 10 V | Through Hole | -55 °C | 175 ░C | 140 W | MOSFET (Metal Oxide) | 20 V | TO-220-3 | N-Channel |