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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.5 V 10 V | Surface Mount | 9.7 A | 1.95 V | 18.85 nC | 1.68 W | 20 V | N-Channel | 16 mOhm | MOSFET (Metal Oxide) | 30 V | TO-252-3 | 867 pF | |||
Diodes Inc | -55 °C | 150 °C | 8-PowerUDFN | 4.5 V 10 V | Surface Mount | 7.62 A | 18.85 nC | 990 mW | 20 V | N-Channel | MOSFET (Metal Oxide) | 30 V | U-DFN3030-8 | 15 mOhm | 2 V | 867 pF | |||
Diodes Inc | -55 °C | 150 °C | 8-PowerUDFN | 4.5 V 10 V | Surface Mount | 7.62 A | 18.85 nC | 990 mW | 20 V | N-Channel | MOSFET (Metal Oxide) | 30 V | U-DFN3030-8 | 15 mOhm | 2 V | 867 pF |