
TC4429 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC
| Part | Gate Type | Input Type | Package Length | Package Name | Package Width | Channel Type | Mounting Type | Current - Peak Output (Source) | Current - Peak Output (Sink) | Logic Voltage - VIH | Logic Voltage - VIL | Operating Temperature (Min) | Operating Temperature (Max) | Gate Channel | Driven Configuration | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Fall Time (Typ) | Rise Time (Typ) | Number of Drivers | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 0.154 in | 8-SOIC | 3.9 mm | Single | Surface Mount | 6 A | 6 A | 2.4 V | 0.8 V | 0 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 6 mm | 8-DFN-S | 5 mm | Single | Surface Mount | 6 A | 6 A | 2.4 V | 0.8 V | -40 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | 8-VDFN Exposed Pad |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 0.3 in | 8-CDIP 8-CERDIP | 7.62 mm | Single | Through Hole | 6 A | 6 A | 2.4 V | 0.8 V | -55 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 0.154 in | 8-SOIC | 3.9 mm | Single | Surface Mount | 6 A | 6 A | 2.4 V | 0.8 V | 0 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | Single | Through Hole | 6 A | 6 A | 2.4 V | 0.8 V | -40 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | Single | Through Hole | 6 A | 6 A | 2.4 V | 0.8 V | 0 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | TO-220-5 | Single | Through Hole | 6 A | 6 A | 2.4 V | 0.8 V | -40 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | TO-220-5 | ||
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 0.154 in | 8-SOIC | 3.9 mm | Single | Surface Mount | 6 A | 6 A | 2.4 V | 0.8 V | -40 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | TO-220-5 | Single | Through Hole | 6 A | 6 A | 2.4 V | 0.8 V | 0 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | TO-220-5 | ||
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | Inverting | 6 mm | 8-DFN-S | 5 mm | Single | Surface Mount | 6 A | 6 A | 2.4 V | 0.8 V | -40 °C | 150 °C | N-Channel P-Channel | Low-Side | 18 V | 4.5 V | 25 ns | 25 ns | 1 | 8-VDFN Exposed Pad |