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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Vgs (Max) Positive | Vgs (Max) Negative | FET Type | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Package Name | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Gate Charge (Max) | Technology | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) (Tj) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1517 pF | 8 V | -12 V | P-Channel | 8.5 A | 34 mOhm | DFN2020MD-6 | Surface Mount | 20 V | 2.5 V | 4.5 V | -55 °C | 175 °C | 1.25 V | 19 nC | MOSFET (Metal Oxide) | 2 W | 6-UDFN Exposed Pad | 8.5 A 8.5 ... 8.5 A |