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MOSFET N-CH 800V 4.5A TO251-3
| Part | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 37 W | 10 V | MOSFET (Metal Oxide) | N-Channel | 300 pF | -55 °C | 150 °C | 1.2 Ohm | 4.5 A | IPAK TO-251-3 Short Leads TO-251AA | Through Hole | 20 V | 3.5 V | 800 V | PG-TO251-3 | 11 nC |