IR MOSFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 22 MOHM;
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 150 °C | -40 °C | 8.3 A 47 A | N-Channel | 20 V | DIRECTFET™ MZ | 22 mOhm | 31 nC | Surface Mount | DirectFET™ Isometric MZ | 100 V | 1360 pF | 2.8 W 89 W | MOSFET (Metal Oxide) | 10 V |