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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Vgs(th) (Max) | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Input Capacitance (Ciss) (Max) | Vgs (Max) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.4 nC | 30 V | Surface Mount | 950 mV | 6.25 W 350 mW | MOSFET (Metal Oxide) | 1 A | 4.5 V | 1.5 V | SOT-883 | 122 pF | 8 V | SC-101 SOT-883 | -55 °C | 150 °C | 0.51 Ohm | P-Channel |