BYV27 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 165V 2A SOD57
| Part | Voltage - DC Reverse (Vr) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Current - Reverse Leakage | Current - Average Rectified (Io) | Package Name | Package / Case | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Mounting Type | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 165 V | 175 °C | -55 °C | Avalanche | 1 µA | 2 A | SOD-57 | Axial SOD-57 | 1.07 V | 500 ns | 200 mA | Through Hole | 25 ns |
Vishay General Semiconductor - Diodes Division | 100 V | 175 °C | -55 °C | Avalanche | 1 µA | 2 A | SOD-57 | Axial SOD-57 | 1.07 V | 500 ns | 200 mA | Through Hole | 25 ns |
Vishay General Semiconductor - Diodes Division | 55 V | 175 °C | -55 °C | Avalanche | 1 µA | 2 A | SOD-57 | Axial SOD-57 | 1.07 V | 500 ns | 200 mA | Through Hole | 25 ns |
Vishay General Semiconductor - Diodes Division | 55 V | 175 °C | -55 °C | Avalanche | 1 µA | 2 A | SOD-57 | Axial SOD-57 | 1.07 V | 500 ns | 200 mA | Through Hole | 25 ns |
Vishay General Semiconductor - Diodes Division | 200 V | 175 °C | -55 °C | Avalanche | 1 µA | 2 A | SOD-57 | Axial SOD-57 | 1.07 V | 500 ns | 200 mA | Through Hole | 25 ns |
Vishay General Semiconductor - Diodes Division | 600 V | 175 °C | -55 °C | Avalanche | 5 µA | 2 A | SOD-57 | Axial SOD-57 | 1.35 V | 500 ns | 200 mA | Through Hole | 250 ns |
Vishay General Semiconductor - Diodes Division | 200 V | 175 °C | -55 °C | Avalanche | 1 µA | 2 A | SOD-57 | Axial SOD-57 | 1.07 V | 500 ns | 200 mA | Through Hole | 25 ns |