SI4936 Series

Catalog

MOSFET 2N-CH 30V 6.9A 8SOIC

Part	Channel Count	Configuration	Configuration - Features	Vgs(th) (Max)	FET Feature	Package Length	Package Name	Package Width	Power - Max	Rds On (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)
Vishay Dale SI4936BDY-T1-GE3	2	N-Channel	Dual	3 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	2.8 W	35 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	15 nC	Surface Mount	530 pF	6.9 A
Vishay Dale SI4936ADY-T1-GE3	2	N-Channel	Dual	3 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	1.1 W	36 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 nC	Surface Mount		4.4 A
Vishay Dale SI4936CDY-T1-GE3	2	N-Channel	Dual	3 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	2.3 W	40 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	9 nC	Surface Mount	325 pF	5.8 A
Vishay Dale SI4936ADY-T1-E3	2	N-Channel	Dual	3 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	1.1 W	36 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 nC	Surface Mount		4.4 A