MBR40035 Series

Catalog

DIODE MOD SCHOTT 35V 200A 2TOWER

Part	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max)	Mounting Type	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case	Technology	Diode Pair Count	Diode Configuration	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name
GeneSiC Semiconductor MBR40035CTR	200 A	700 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Reverse Polarity Schottky	1 pair	Common Anode	1 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTRL	200 A	600 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Schottky	1 pair	Common Anode	3 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CT	200 A	700 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Schottky	1 pair	Common Cathode	1 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CT	200 A	700 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Schottky	1 pair	Common Cathode	1 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTL	200 A	600 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Schottky	1 pair	Common Cathode	3 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTRL	200 A	600 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Schottky	1 pair	Common Anode	3 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTR	200 A	700 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Reverse Polarity Schottky	1 pair	Common Anode	1 mA	35 V	150 °C	-55 °C	Twin Tower
GeneSiC Semiconductor MBR40035CTL	200 A	600 mV	Chassis Mount	500 ns	200 mA	Twin Tower	Schottky	1 pair	Common Cathode	3 mA	35 V	150 °C	-55 °C	Twin Tower