MOSFET N-CH 800V 2.5A TO251-3
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Package / Case | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 150 pF | 800 V | 2.4 Ohm | PG-TO251-3 | 10 V | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 3.5 V | N-Channel | 2.5 A | 22 W | -55 °C | 150 °C | 7.5 nC | ||
Infineon Technologies | Through Hole | 175 pF | 800 V | 2 Ohm | PG-TO251-3 | 10 V | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 3.5 V | N-Channel | 3 A | -55 °C | 150 °C | 9 nC | 24 W |