Beta
⌘K
POWER MOSFET, P CHANNEL, 100 V, 680 MA, 1.8 OHM, SOT-223, SURFACE MOUNT
| Part | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id | Mounting Type | Technology | Grade | FET Type | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V 10 V | AEC-Q101 | 6.4 nC | TO-261-4 TO-261AA | 680 mA | 20 V | -55 °C | 150 °C | 146 pF | 100 V | PG-SOT223-4 | 2 V | Surface Mount | MOSFET (Metal Oxide) | Automotive | P-Channel | 1.8 W | 1.8 Ohm |