GC20MPS12 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARB 1.2KV 90A TO247-2
| Part | Voltage - DC Reverse (Vr) (Max) | Package Name | Current - Average Rectified (Io) | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Package / Case | Reverse Recovery Time (trr) | Capacitance | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 1200 V | TO-247-2 | 90 A | 18 µA | 1.8 V | Through Hole | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | TO-247-2 | 0 ns | 1298 pF | |||
 GeneSiC Semiconductor | 1200 V | TO-220-2 | 94 A | 18 µA | 1.8 V | Through Hole | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | TO-220-2 | 0 ns | 1298 pF | 500 mA | No Recovery Time | 500 mA 500 mA |
GeneSiC Semiconductor | 1200 V | TO-220-2 | 94 A | 18 µA | 1.8 V | Through Hole | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | TO-220-2 | 0 ns | 1298 pF | |||
GeneSiC Semiconductor | 1200 V | TO-247-2 | 90 A | 18 µA | 1.8 V | Through Hole | 175 °C | -55 °C | SiC (Silicon Carbide) Schottky | TO-247-2 | 0 ns | 1298 pF | 500 mA | No Recovery Time | 500 mA 500 mA |