MOSFET N/P-CH 60V 5A/3.1A 8SOP
| Part | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Technology | Power - Max [Max] | Configuration | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Goford Semiconductor G05NP06S2 | 37 nC | 22 nC | 8-SOP | -55 °C | 150 °C | 1336 pF, 1454 pF | 8-SOIC | 3.9 mm | 0.154 in | 2 V, 2.2 V | 36 mOhm, 80 mOhm | 5 A | 3.1 A | MOSFET (Metal Oxide) | 1.9 W, 2.5 W | N and P-Channel | Surface Mount | 60 V | |
Goford Semiconductor G05N06S2 | 22 nC | 8-SOP | -55 °C | 150 °C | 1374 pF | 8-SOIC | 3.9 mm | 0.154 in | 2.5 V | 35 mOhm | 5 A | MOSFET (Metal Oxide) | 2 N-Channel | Surface Mount | 60 V | 26 nC |