MOSFET TRANSISTOR, N CHANNEL, 31 A, 100 V, 0.034 OHM, 10 V, 4 V ROHS COMPLIANT: YES
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 3 W 110 W | 1690 pF | 20 V | MOSFET (Metal Oxide) | 10 V | TO-252AA (DPAK) | 31 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | -55 °C | 175 ░C | 100 V | Surface Mount | 56 nC | 39 mOhm |
Infineon Technologies | 4 V | 3 W 110 W | 1690 pF | 20 V | MOSFET (Metal Oxide) | 10 V | TO-252AA (DPAK) | 31 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | -55 °C | 175 ░C | 100 V | Surface Mount | 56 nC | 39 mOhm |