DMG2302UKQ Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Qualification	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Supplier Device Package	Grade
Diodes Inc DMG2302UKQ-13	AEC-Q101	SC-59 SOT-23-3 TO-236-3	90 mOhm	-55 °C	150 °C	2.5 V 4.5 V	MOSFET (Metal Oxide)	2.8 A	1 V	20 V	660 mW	2.8 nC	Surface Mount	130 pF	12 V	N-Channel	SOT-23-3	Automotive
Diodes Inc DMG2302UQ-7		SC-59 SOT-23-3 TO-236-3	90 mOhm	-55 °C	150 °C	2.5 V 4.5 V	MOSFET (Metal Oxide)	4.2 A	1 V	20 V		7 nC	Surface Mount	594.3 pF	8 V	N-Channel	SOT-23-3
Diodes Inc DMG2302U-7		SC-59 SOT-23-3 TO-236-3	90 mOhm	-55 °C	150 °C	2.5 V 4.5 V	MOSFET (Metal Oxide)	4.2 A	1 V	20 V		7 nC	Surface Mount	594.3 pF	8 V	N-Channel	SOT-23-3

Catalog

NRND = Not Recommended for New Design

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.