IPI029 Series

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; I2PAK TO-262 PACKAGE; 2.9 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)
Infineon Technologies IPI029N06NAKSA1	6 V 10 V	3 W 136 W	4100 pF	-55 °C	175 ░C	2.9 mOhm	24 A 100 A	PG-TO262-3	N-Channel	20 V	Through Hole	56 nC	MOSFET (Metal Oxide)	2.8 V	I2PAK TO-262-3 Long Leads TO-262AA	60 V