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MOSFET 2N-CH 30V 4A 6DFN
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature | Technology | Vgs(th) (Max) @ Id | Power - Max [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 46 mOhm | 150 °C | MOSFET (Metal Oxide) | 1 V | 1 W | 2 N-Channel (Dual) | 4 A | 30 V | 6-µDFN (2x2) | Surface Mount | 310 pF | 4 nC |