MSC400SMA330 Series

3300V Silicon Carbide (SiC) MOSFET

Catalog

3300V Silicon Carbide (SiC) MOSFET

Part	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Technology	Package / Case	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max) Negative	Vgs (Max) Positive	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Microchip Technology MSC400SMA330D/S
Microchip Technology MSC400SMA330B4	3300 V	520 mOhm	N-Channel	37 nC	20 V	TO-247-4	SiCFET (Silicon Carbide)	TO-247-4	131 W	2.97 V	Through Hole	11 A	-10 V	23 V	579 pF	-55 °C	150 °C

Catalog

3300V Silicon Carbide (SiC) MOSFET

Description

MSC400SMA330 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.