IXA33IF1200HB Series

Disc IGBT XPT-GenX3

Catalog

Disc IGBT XPT-GenX3

Part	Mounting Type	Package / Case	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max)	Input Type	Gate Charge	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Switching Energy (On)	Switching Energy (Off)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Reverse Recovery Time (trr)	Test Condition Resistance	Test Condition Voltage (Secondary)	Test Condition Voltage	Test Condition Current
LITTELFUSE IXA33IF1200HB	Through Hole	TO-247-3	58 A	250 VA	2.1 V	Standard	76 nC	PT	1200 V	2500 µJ	3 mJ	-40 °C	150 °C	TO-247AD	350 ns	39 Ohm	15 V	600 V	25 A

Catalog

Disc IGBT XPT-GenX3

Description

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements