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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Feature | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 29 A 100 A | 2 V | -55 °C | 150 °C | 8-PowerTDFN | N-Channel | 20 V | 1.9 mOhm | Schottky Diode (Body) | 2.5 W 50 W | MOSFET (Metal Oxide) | 4.5 V 10 V | 30 V | PG-TDSON-8-6 | Surface Mount |