DMN3300UQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Grade	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)
Diodes Inc DMN3300UQ-7	N-Channel	SOT-23-3	30 V	SC-59 SOT-23-3 TO-236-3	Automotive	1.5 A	700 mW	MOSFET (Metal Oxide)	1 V	Surface Mount	1.5 V 4.5 V	150 mOhm	-55 °C	150 °C	AEC-Q101	193 pF	12 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant

• Halogen- and Antimony-Free. "Green" Device

• The DMN3300UQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power managementapplications.