IPP65R Series

Catalog

MOSFET N-CH 650V 57.7A TO220-3

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Power Dissipation (Max) [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs [x]
Infineon Technologies IPP65R074C6XKSA1	74 mOhm	3.5 V	480.8 W	N-Channel	MOSFET (Metal Oxide)	20 V	57.7 A	17 nC	650 V	PG-TO220-3	10 V	-55 °C	150 °C	TO-220-3	Through Hole
Infineon Technologies IPP65R380C6XKSA1	380 mOhm	3.5 V	83 W	N-Channel	MOSFET (Metal Oxide)	20 V	10.6 A		650 V	PG-TO220-3	10 V	-55 °C	150 °C	TO-220-3	Through Hole	39 nC	710 pF
Infineon Technologies IPP65R380E6XKSA1	380 mOhm	3.5 V	83 W	N-Channel	MOSFET (Metal Oxide)	20 V	10.6 A		650 V	PG-TO220-3	10 V	-55 °C	150 °C	TO-220-3	Through Hole	39 nC	710 pF
Infineon Technologies IPP65R190CFDAAKSA1	190 mOhm	4.5 V		N-Channel	MOSFET (Metal Oxide)	20 V	17.5 A		650 V	PG-TO220-3	10 V	-40 °C	150 °C	TO-220-3	Through Hole	68 nC	1850 pF	Automotive	151 W	AEC-Q101
Infineon Technologies IPP65R660CFDAAKSA1	660 mOhm	4.5 V		N-Channel	MOSFET (Metal Oxide)	20 V	6 A		650 V	PG-TO220-3	10 V	-40 °C	150 °C	TO-220-3	Through Hole		543 pF	Automotive	62.5 W	AEC-Q101	20 nC