DMPH3010LK3Q Series

175°C P-Channel Enhancement Mode MOSFET

Catalog

175°C P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Qualification	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Vgs (Max)
Diodes Inc DMPH3010LK3Q-13	3.9 W	AEC-Q101	P-Channel	Surface Mount	4.5 V 10 V	139 nC	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	7.5 mOhm	MOSFET (Metal Oxide)	50 A	2.1 V	-55 °C	175 ░C	Automotive	20 V
Diodes Inc DMPH3010LK3-13	3.9 W		P-Channel	Surface Mount	4.5 V 10 V	139 nC	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	7.5 mOhm	MOSFET (Metal Oxide)	50 A	2.1 V	-55 °C	175 ░C		20 V
Diodes Inc DMPH3010LPS-13	2.6 W		P-Channel	Surface Mount	4.5 V 10 V	139 nC	30 V	8-PowerTDFN	PowerDI5060-8	7.5 mOhm	MOSFET (Metal Oxide)	60 A	2.1 V	-55 °C	175 ░C		20 V

Catalog

175°C P-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low On-Resistance

• Fast Switching Speed

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.