IR MOSFET™ N-CHANNEL ; DPAK TO-252 PACKAGE; 44 MOHM; WIDE SOA
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Power Dissipation (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1960 pF | 44 mOhm | TO-252AA (DPAK) | 4 V | 32 A | 71 nC | MOSFET (Metal Oxide) | 10 V | 100 V | N-Channel | -55 °C | 175 ░C | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 130 W | 20 V |