Catalog
Low voltage NPN power Darlington transistor
Description
AI
The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.
Low voltage NPN power Darlington transistor
Low voltage NPN power Darlington transistor
| Part | Package / Case | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Operating Temperature | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics 2STBN15D100 | ||||||||||
STMicroelectronics 2STBN15D100 | ||||||||||
STMicroelectronics 2STBN15D100 | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 100 µA | 100 V | 12 A | 70 W | 1.3 V | 750 hFE | 150 °C | Surface Mount | TO-263 (D2PAK) |
STMicroelectronics 2STBN15D100 |