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IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 42 MOHM;
| Part | FET Type | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | TO-262 | MOSFET (Metal Oxide) | 5 V | I2PAK TO-262-3 Long Leads TO-262AA | 150 V | 1750 pF | 33 A | 144 W | 10 V | 20 V | Through Hole | -55 °C | 175 ░C | 42 mOhm | 40 nC |