MOSFET N-CH 600V 3.2A TO263-3
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 1.4 Ohm | 20 V | 16 nC | 5.5 V | 38 W | -55 °C | 150 °C | 420 pF | MOSFET (Metal Oxide) | 600 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 3.2 A | N-Channel | PG-TO263-3-2 |