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MOSFET N-CH 30V 129A 8PDFN
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 31 nC | 129 A | -55 °C | 150 °C | 96 W | 8-PowerTDFN | MOSFET (Metal Oxide) | 4.5 V 10 V | 20 V | N-Channel | 1850 pF | 2.5 V | 8-PDFN (5x6) | Surface Mount | 30 V | 3.3 mOhm |