STB11NK40ZT4 Series

N-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in D2PAK package

Catalog

N-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in D2PAK package

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
STMicroelectronics STB11NK40ZT4	550 mOhm	400 V	930 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	32 nC	-55 °C	150 °C	110 W	30 V	Surface Mount	N-Channel	9 A	MOSFET (Metal Oxide)	10 V	4.5 V
STMicroelectronics STB11NM60FDT4	450 mOhm	600 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK					30 V	Surface Mount	N-Channel	11 A	MOSFET (Metal Oxide)	10 V	5 V	900 pF	40 nC
STMicroelectronics STB11NM80T4	400 mOhm	800 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK		-65 °C	150 °C		30 V	Surface Mount	N-Channel	11 A	MOSFET (Metal Oxide)	10 V	5 V	1630 pF	43.6 nC	150 W

Catalog

N-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in D2PAK package

Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.