RF4E080BN Series
Manufacturer: Rohm Semiconductor
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MOSFET N-CH 30V 8A HUML2020L8
| Part | Rds On (Max) | Technology | Gate Charge (Max) | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Operating Temperature | Input Capacitance (Ciss) (Max) | Package / Case | Power Dissipation (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 17.6 mOhm | MOSFET (Metal Oxide) | 14.5 nC | 20 V | N-Channel | 30 V | 2 V | Surface Mount | 8 A | 150 °C | 660 pF | 8-PowerUDFN | 2 W | HUML2020L8 | 10 V | 4.5 V |