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IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 90 MOHM;
| Part | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 5.5 V | Surface Mount | 10 V | -55 °C | 150 °C | 2.5 W | 8-SO | 150 V | 3.6 A | 30 V | 990 pF | 41 nC | MOSFET (Metal Oxide) | 90 mOhm | 8-SOIC | 3.9 mm | 0.154 in |