IC NVSRAM 4MBIT PARALLEL 34LPM
| Part | Memory Size | Supplier Device Package | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Interface | Access Time | Technology | Mounting Type | Memory Organization | Memory Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1250YL-70-IND | 512 kb | 34-LPM | NVSRAM | 85 °C | -40 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 512 K | Non-Volatile | |||||
Analog Devices Inc./Maxim Integrated DS1250Y-100IND | 512 kb | 32-EDIP | NVSRAM | 85 °C | -40 °C | 4.5 V | 5.5 V | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 100 ns | 100 ns | 0.6 in | 15.24 mm | 32-DIP Module |
Analog Devices Inc./Maxim Integrated DS1250Y-100 | 512 kb | 32-EDIP | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 100 ns | 100 ns | 0.6 in | 15.24 mm | 32-DIP Module |
Analog Devices Inc./Maxim Integrated DS1250Y-70+ | 512 kb | 32-EDIP | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 0.6 in | 15.24 mm | 32-DIP Module | ||
Analog Devices Inc./Maxim Integrated DS1250YP-100+ | 512 kb | 34-PowerCap Module | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 512 K | Non-Volatile | 100 ns | 100 ns | 34-PowerCap™ Module | ||
Analog Devices Inc./Maxim Integrated DS1250YP-70IND | 512 kb | 34-PowerCap Module | NVSRAM | 85 °C | -40 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 512 K | Non-Volatile | 34-PowerCap™ Module | ||||
Analog Devices Inc./Maxim Integrated DS1250YP-70IND+ | 512 kb | 34-PowerCap Module | NVSRAM | 85 °C | -40 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 512 K | Non-Volatile | 34-PowerCap™ Module | ||||
Analog Devices Inc./Maxim Integrated DS1250YP-70+ | 512 kb | 34-PowerCap Module | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 512 K | Non-Volatile | 34-PowerCap™ Module | ||||
Analog Devices Inc./Maxim Integrated DS1250YP-100 | 512 kb | 34-PowerCap Module | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | Surface Mount | 512 K | Non-Volatile | 100 ns | 100 ns | 34-PowerCap™ Module | ||
Analog Devices Inc./Maxim Integrated DS1250Y-70IND+ | 512 kb | 32-EDIP | NVSRAM | 85 °C | -40 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 0.6 in | 15.24 mm | 32-DIP Module | ||
Analog Devices Inc./Maxim Integrated DS1250Y-70 | 512 kb | 32-EDIP | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 0.6 in | 15.24 mm | 32-DIP Module | ||
Analog Devices Inc./Maxim Integrated DS1250Y-100+ | 512 kb | 32-EDIP | NVSRAM | 70 °C | 0 °C | 4.5 V | 5.5 V | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 100 ns | 100 ns | 0.6 in | 15.24 mm | 32-DIP Module |
Analog Devices Inc./Maxim Integrated DS1250Y-100IND+ | 512 kb | 32-EDIP | NVSRAM | 85 °C | -40 °C | 4.5 V | 5.5 V | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | Through Hole | 512 K | Non-Volatile | 100 ns | 100 ns | 0.6 in | 15.24 mm | 32-DIP Module |