STB75NF75L Series

N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in D2PAK package

Catalog

N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in D2PAK package

Part	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB75NF75LT4	300 W	90 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	75 V	Surface Mount	4300 pF	11 mOhm	10 V	5 V	15 V	N-Channel	75 A	2.5 V	D2PAK	-55 °C	175 ░C
STMicroelectronics STB75NF75T4	300 W	160 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	75 V	Surface Mount		11 mOhm			20 V	N-Channel		4 V	D2PAK	-55 °C	175 ░C	10 V	3700 pF

Catalog

N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in D2PAK package

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.