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MOSFET N-CH 55V 100A TO263-3
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 55 V | 300 W | -55 °C | 175 ░C | 4.7 mOhm | N-Channel | 4 V | PG-TO263-3-2 | Surface Mount | 170 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 20 V | 6800 pF | 100 A | 10 V |