Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Configuration | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 422 pF | 2.5 A 3.8 A | 12.3 nC | Logic Level Gate | 30 V | 1.5 V | N and P-Channel | SOT-23-6 Thin TSOT-23-6 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 850 mW | 55 mOhm | Surface Mount |