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MOSFET P-CH 12V 1A CST3C
| Part | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.2 V 4.5 V | P-Channel | SC-101 SOT-883 | MOSFET (Metal Oxide) | 370 mOhm | CST3C | 500 mW | 10 V | 1 V | 150 °C | 50 pF | 1 A | 12 V | Surface Mount |