Catalog
650V, 20A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 20A, THD, Silicon-carbide (SiC) SBD
650V, 20A, THD, Silicon-carbide (SiC) SBD
| Part | Technology | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) | Mounting Type | Reverse Recovery Time (trr) | Package Name | Package / Case | Current - Reverse Leakage | Capacitance | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 1.5 V | 20 A | Through Hole | 0 ns | TO-220ACFP | TO-220-2 | 100 µA | 1000 pF | 650 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C |