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IRF60 - 12V-300V N-CHANNEL POWER
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 60 V | 20 V | 6530 pF | 6 V 10 V | Surface Mount | 96 W | 200 nC | MOSFET (Metal Oxide) | 2.9 mOhm | -55 °C | 150 °C | 130 A | N-Channel | 3.7 V | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
Infineon Technologies | 60 V | 20 V | 6530 pF | 6 V 10 V | Surface Mount | 96 W | 200 nC | MOSFET (Metal Oxide) | 2.9 mOhm | -55 °C | 150 °C | 130 A | N-Channel | 3.7 V | DirectFET™ Isometric ME | DirectFET™ Isometric ME |