IC FRAM 64KBIT SPI 33MHZ 8SON
| Part | Qualification | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Memory Format | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Organization | Package / Case | Mounting Type | Access Time | Clock Frequency | Memory Interface | Memory Size | Grade | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Fujitsu Semiconductor Memory Solution MB85RS64VYPNF-G-AWE2 | AEC-Q100 | 8-SON (2x3) | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-WFDFN Exposed Pad | Surface Mount | 13 ns | 33 MHz | SPI | 64 Kbit | Automotive | ||
Fujitsu Semiconductor Memory Solution MB85RS64TPNF-G-JNE2 | 8-SOP | FRAM (Ferroelectric RAM) | -40 °C | 85 °C | FRAM | Non-Volatile | 1.8 V | 3.6 V | 8 K | 8-SOIC | Surface Mount | 18 ns | 10 MHz | SPI | 64 Kbit | 3.9 mm | 0.154 in | ||
Fujitsu Semiconductor Memory Solution MB85RS64VYPNF-G-BCE1 | AEC-Q100 | 8-SOP | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-SOIC | Surface Mount | 33 MHz | SPI | 64 Kbit | Automotive | 3.9 mm | 0.154 in | |
Fujitsu Semiconductor Memory Solution MB85RS64VYPN-G-AMEWE1 | AEC-Q100 | 8-DFN (5x6) | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-VDFN Exposed Pad | Surface Mount | 33 MHz | SPI | 64 Kbit | Automotive | |||
Fujitsu Semiconductor Memory Solution MB85RS64VYPNF-GS-AWERE2 | AEC-Q100 | 8-SON (2x3) | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-WFDFN Exposed Pad | Surface Mount | 13 ns | 33 MHz | SPI | 64 Kbit | Automotive | ||
Fujitsu Semiconductor Memory Solution MB85RS64VPNF-G-JNE1 | 8-SOP | FRAM (Ferroelectric RAM) | -40 °C | 85 °C | FRAM | Non-Volatile | 3 V | 5.5 V | 8 K | 8-SOIC | Surface Mount | 20 ns | 20 MHz | SPI | 64 Kbit | 3.9 mm | 0.154 in | ||
Fujitsu Semiconductor Memory Solution MB85RS64VYPNF-GS-AWE2 | AEC-Q100 | 8-SON (2x3) | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-WFDFN Exposed Pad | Surface Mount | 13 ns | 33 MHz | SPI | 64 Kbit | Automotive | ||
Fujitsu Semiconductor Memory Solution MB85RS64VYPNF-GS-BCERE1 | AEC-Q100 | 8-SOP | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-SOIC | Surface Mount | 33 MHz | SPI | 64 Kbit | Automotive | 3.9 mm | 0.154 in | |
Fujitsu Semiconductor Memory Solution MB85RS64TUPNF-G-JNE2 | 8-SOP | FRAM (Ferroelectric RAM) | -55 C | 85 C | FRAM | Non-Volatile | 1.8 V | 3.6 V | 8 K | 8-SOIC | Surface Mount | 18 ns | 10 MHz | SPI | 64 Kbit | 3.9 mm | 0.154 in | ||
Fujitsu Semiconductor Memory Solution MB85RS64VYPNF-G-AWERE2 | AEC-Q100 | 8-SON (2x3) | FRAM (Ferroelectric RAM) | -40 °C | 125 °C | FRAM | Non-Volatile | 2.7 V | 5.5 V | 8 K | 8-WFDFN Exposed Pad | Surface Mount | 13 ns | 33 MHz | SPI | 64 Kbit | Automotive |