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DIODE SIL CARB 650V 16A TO247-3
| Part | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Speed | Capacitance @ Vr, F | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Mounting Type | Package / Case | Current - Average Rectified (Io) | Qualification | Voltage - DC Reverse (Vr) (Max) [Max] | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO247-3-41 | 1.7 V | No Recovery Time | 471 pF | SiC (Silicon Carbide) Schottky | -40 °C | 175 ░C | 0 ns | 90 µA | Through Hole | TO-247-3 | 16 A | AEC-Q100/101 | 650 V | Automotive |