MSCDC200 Series

1200V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Catalog

1200V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Part	Operating Temperature (Max)	Operating Temperature (Min)	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)	Voltage - Peak Reverse (Max)	Diode Type	Mounting Type	Package / Case	Current - Average Rectified (Io)	Package Name	Technology	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Diode Pair Count	Diode Configuration	Voltage - DC Reverse (Vr) (Max)
Microchip Technology MSCDC200H120AG	175 °C	-40 °C	800 µA	1.8 V	1200 V	Single Phase	Chassis Mount	Module	200 A	SP6	Silicon Carbide Schottky
Microchip Technology MSCDC200H170AG	175 °C	-40 °C	800 µA	1.8 V	1.7 kV	Single Phase	Chassis Mount	Module	200 A	SP6	Silicon Carbide Schottky
Microchip Technology MSCDC200KK120D1PAG			800 µA	1.8 V			Chassis Mount	Module		D1P	SiC (Silicon Carbide) Schottky	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-40 °C	200 A	0 ns	1 pair	Common Cathode	1200 V
Microchip Technology MSCDC200KK70D1PAG			800 µA	1.8 V			Chassis Mount	Module		D1P	SiC (Silicon Carbide) Schottky	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-40 °C	200 A	0 ns	1 pair	Common Cathode	700 V
Microchip Technology MSCDC200A170D1PAG			800 µA	1.8 V			Chassis Mount	Module		D1P	SiC (Silicon Carbide) Schottky	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-40 °C	200 A	0 ns	1 pair	Series Connection	1700 V
Microchip Technology MSCDC200A70D1PAG			800 µA	1.8 V			Chassis Mount	Module		D1P	SiC (Silicon Carbide) Schottky	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-40 °C	200 A	0 ns	1 pair	Series Connection	700 V
Microchip Technology MSCDC200KK170D1PAG			800 µA	1.8 V			Chassis Mount	Module		D1P	SiC (Silicon Carbide) Schottky	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-40 °C	200 A	0 ns	1 pair	Common Cathode	1700 V
Microchip Technology MSCDC200A120D1PAG			800 µA	1.8 V			Chassis Mount	Module		D1P	SiC (Silicon Carbide) Schottky	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-40 °C	200 A	0 ns	1 pair	Series Connection	1200 V

Catalog

1200V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Description

* SiC Schottky Diode * Zero reverse recovery * Zero forward recovery * Temperature Independent switching behavior * Positive temperature coefficient on VF * Low stray inductance * High efficiency converter * Outstanding performance at high frequency operation * Stable temperature behavior * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant