DMTH8028LFVW Series

80V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Part	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)	Technology
Diodes Inc DMTH8028LFVW-7	8-PowerVDFN	Surface Mount Wettable Flank	27 A	25 mOhm	4.5 V 10 V	80 V	PowerDI3333-8 (SWP) Type UX	10.4 nC	N-Channel	-55 °C	175 ░C	2.5 V	631 pF	1.5 W	20 V	MOSFET (Metal Oxide)

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Small Form Factor, Thermally Efficient Package Enables Higher Density End Products

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH8028LFVWQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.