MSC025SMA120 Series

Catalog

1200V, 25 MOHM, DISCRETE MSIC™ MOSFET

Part	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max)	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
Microchip Technology MSC025SMA120B4N	3633 pF	TO-247-4	1200 V	TO-247-4	5 V	31 mOhm	-10 V	23 V	113 A	232 nC 232 nC	Through Hole	577 W	20 V	18 V	N-Channel	-55 °C	175 °C	SiCFET (Silicon Carbide)
Microchip Technology MSC025SMA120D/S
Microchip Technology MSC025SMA120S		D3PAK	1200 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA					89 A		Surface Mount				N-Channel	-55 °C	175 °C	SiCFET (Silicon Carbide)
Microchip Technology MSC025SMA120B4	3020 pF	TO-247-4	1200 V	TO-247-4	2.8 V	31 mOhm	-10 V	23 V	103 A	232 nC 232 nC	Through Hole	500 W			N-Channel	-55 °C	175 °C	SiCFET (Silicon Carbide)	20 V
Microchip Technology MSC025SMA120B	3020 pF	TO-247-3	1200 V	TO-247-3	2.8 V	31 mOhm	-10 V	25 V	103 A	232 nC 232 nC	Through Hole	500 W			N-Channel	-55 °C	175 °C	SiCFET (Silicon Carbide)	20 V
Microchip Technology MSC025SMA120J	3020 pF	SOT-227 (ISOTOP®)	1200 V	miniBLOC SOT-227-4	2.8 V	31 mOhm	-10 V	25 V	77 A	232 nC 232 nC	Chassis Mount	278 W			N-Channel	-55 °C	175 °C	SiCFET (Silicon Carbide)	20 V