IPW65R080 Series

Catalog

650 V COOLMOS™ CFDA AUTOMOTIVE POWER MOSFET PG-TO247-3

Part	Vgs (Max)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Grade	Rds On (Max) @ Id, Vgs	Qualification	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPW65R080CFDAFKSA1	20 V	N-Channel	Through Hole	10 V	4440 pF	43.3 A	PG-TO247-3	MOSFET (Metal Oxide)	650 V	161 nC	391 W	150 °C	-40 °C	TO-247-3	Automotive	80 mOhm	AEC-Q101	4.5 V
Infineon Technologies IPW65R080CFDFKSA2	20 V	N-Channel	Through Hole	10 V	5030 pF	43.3 A	PG-TO247-3	MOSFET (Metal Oxide)	650 V		391 W	150 °C	-55 °C	TO-247-3		80 mOhm		4.5 V	167 nC
Infineon Technologies IPW65R080CFDFKSA1	20 V	N-Channel	Through Hole	10 V	5030 pF	43.3 A	PG-TO247-3-1	MOSFET (Metal Oxide)	700 V		391 W	150 °C	-55 °C	TO-247-3		80 mOhm		4.5 V	170 nC