Beta
⌘K
POWER MOSFET, HEXFET, P CHANNEL, 12 V, 4.3 A, 0.05 OHM, SOT-23, SURFACE MOUNT
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 830 pF | -55 °C | 150 °C | P-Channel | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 1.3 W | Micro3™/SOT-23 | 950 mV | 12 V | 4.3 A | 50 mOhm | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 8 V | 15 nC |