
MIC4451 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC
| Part | Gate Type | Package Length | Package Name | Package Width | Current - Peak Output (Source) | Current - Peak Output (Sink) | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Gate Channel | Driven Configuration | Mounting Type | Operating Temperature (Max) | Operating Temperature (Min) | Channel Type | Rise Time (Typ) | Fall Time (Typ) | Logic Voltage - VIH | Logic Voltage - VIL | Number of Drivers | Input Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.154 in | 8-SOIC | 3.9 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Surface Mount | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Through Hole | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.154 in | 8-SOIC | 3.9 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Surface Mount | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.154 in | 8-SOIC | 3.9 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Surface Mount | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Through Hole | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Through Hole | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | |
Microchip Technology | IGBT MOSFET | TO-220-5 | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Through Hole | 70 °C | 0 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting | TO-220-5 | ||
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 0.154 in | 8-SOIC | 3.9 mm | 12 A | 12 A | 18 V | 4.5 V | N-Channel | Low-Side | Surface Mount | 85 °C | -40 °C | Single | 20 ns | 24 ns | 2.4 V | 0.8 V | 1 | Inverting |