MBR60020 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 20V 300A 2TOWER
| Part | Package / Case | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) | Current - Reverse Leakage | Mounting Type | Technology | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Diode Pair Count | Diode Configuration | Voltage - DC Reverse (Vr) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 580 mV | 3 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Anode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 750 mV | 1 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Anode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 750 mV | 1 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Cathode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 580 mV | 3 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Cathode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 580 mV | 3 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Cathode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 750 mV | 1 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Anode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 580 mV | 3 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Anode | 20 V |
GeneSiC Semiconductor | Twin Tower | 500 ns | 200 mA | 300 A | 750 mV | 1 mA | Chassis Mount | Schottky | Twin Tower | 150 °C | -55 °C | 1 pair | Common Cathode | 20 V |