DMC3350LDW Series

Complementary Pair Enhancement Mode MOSFET

Catalog

Complementary Pair Enhancement Mode MOSFET

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
Diodes Inc DMC3350LDW-7	350 mW	400 mOhm 900 mOhm	600 mA 900 mA	N and P-Channel Complementary	19 pF 38.4 pF	MOSFET (Metal Oxide)	800 pC	1.1 nC	-55 °C	150 °C	1.6 V 2.6 V	Surface Mount	6-TSSOP SC-88 SOT-363	SOT-363	30 V
Diodes Inc DMC3350LDW-13	350 mW	400 mOhm 900 mOhm	600 mA 900 mA	N and P-Channel Complementary	19 pF 38.4 pF	MOSFET (Metal Oxide)	800 pC	1.1 nC	-55 °C	150 °C	1.6 V 2.6 V	Surface Mount	6-TSSOP SC-88 SOT-363	SOT-363	30 V

Catalog

Complementary Pair Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.