DMG6602SVTQ Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Power - Max [Max]	Mounting Type	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMG6602SVT-7	840 mW	Surface Mount	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	2.8 A 3.4 A	2.3 V	30 V	400 pF	N and P-Channel	4.5V Drive Logic Level Gate	13 nC	60 mOhm	-55 °C	150 °C
Diodes Inc DMG6602SVTQ-7	840 mW	Surface Mount	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	2.8 A 3.4 A	2.3 V	30 V	400 pF	N and P-Channel		13 nC	60 mOhm	-55 °C	150 °C

Catalog

NRND = Not Recommended for New Design

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMG6602SVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to Handheld application.